Resistive switching characteristics and mechanism of thermally grown WOx thin films | Zendy

Kuyyadi P. Biju | Zendy; Xinjun Liu | Zendy; Manzar Siddik | Zendy; Seonghyun Kim | Zendy; Jungho Shin | Zendy; Insung Kim | Zendy; A. Ignatiev | Zendy; Hyunsang Hwang | Zendy

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Resistive switching characteristics and mechanism of thermally grown WOx thin films

Author(s) -

Kuyyadi P. Biju,

Xinjun Liu,

Manzar Siddik,

Seonghyun Kim,

Jungho Shin,

Insung Kim,

A. Ignatiev,

Hyunsang Hwang

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3633227

Subject(s) - thermal conduction , materials science , schottky diode , ohmic contact , schottky barrier , electric field , optoelectronics , poole–frenkel effect , field electron emission , quantum tunnelling , thin film , layer (electronics) , condensed matter physics , electron , nanotechnology , composite material , diode , physics , quantum mechanics

Resistive switching characteristics of thermally oxidized tungsten thin films and their switching mechanism were investigated, modifying thickness of the active layer (WOx) by varying oxidation conditions. Two types of switching were observed in Pt/WOx/W memory devices. Thinner film (t ≤ 15 nm) exhibits clockwise switching (CWS) with filamentary characteristics, whereas thicker film (t ≥ 25 nm) exhibits counter-clockwise switching (CCWS) with more homogeneous conduction. Both switching modes are highly reliable and show good cycling endurance. The conduction phenomena in two different switching modes were examined. In the case of CWS, the conduction mechanism changes from Schottky emission to ohmic conduction due to the local bypass of Schottky barrier formed at Pt/WOx interface by oxygen vacancies. Contrary to CWS, CCWS showed a completely different conduction mechanism. The high resistance state is dominated by the Schottky emission at low electric field and by Poole–Frenkel emission at high electric fi...

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