On Hall scattering factors for holes in GaAs | Zendy

D. C. Look | Zendy; C. E. Stutz | Zendy; J. R. Sizelove | Zendy; K. R. Evans | Zendy

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On Hall scattering factors for holes in GaAs

Author(s) -

D. C. Look,

C. E. Stutz,

J. R. Sizelove,

K. R. Evans

Publication year - 1996

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.363007

Subject(s) - scattering , hall effect , electron , condensed matter physics , molecular beam epitaxy , electron scattering , materials science , capacitance , ranging , epitaxy , physics , electrical resistivity and conductivity , optics , nanotechnology , nuclear physics , electrode , quantum mechanics , telecommunications , layer (electronics) , computer science

Hall scattering factors for electrons and holes in molecular beam epitaxial GaAs layers have been determined by comparing carrier concentrations measured by the Hall effect with those measured by the electrochemical capacitance–voltage technique. The conclusion is that both the electron and hole scattering factors are near unity for n ranging from 2×1016 to 7×1017 cm−3, and p ranging from 5×1016 to 4×1019 cm−3. This conclusion is consistent with the present theory for electrons, but not with that for holes.

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