Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition | Zendy

W. L. Wang | Zendy; M.C. Polo | Zendy; G. Sánchez | Zendy; J. Cifré | Zendy; J. Esteve | Zendy

Open Access

Internal stress and strain in heavily boron-doped diamond films grown by microwave plasma and hot filament chemical vapor deposition

Author(s) -

W. L. Wang,

M.C. Polo,

G. Sánchez,

J. Cifré,

J. Esteve

Publication year - 1996

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.362996

Subject(s) - chemical vapor deposition , boron , materials science , diamond , stress relaxation , grain boundary , stress (linguistics) , composite material , ultimate tensile strength , microstructure , nanotechnology , chemistry , creep , linguistics , philosophy , organic chemistry

The internal stress and strain in boron‐doped diamond films grown by microwave plasma chemical vapor deposition (MWCVD) and hot filament CVD (HFCVD) were studied as a function of boron concentration. The total stress (thermal+intrinsic) was tensile, and the stress and strain increased with boron concentration. The stress and the strain measured in HFCVD samples were greater than those of MWCVD samples at the same boron concentration. The intrinsic tensile stress, 0.84 GPa, calculated by the grain boundary relaxation model, was in good agreement with the experimental value when the boron concentration in the films was below 0.3 at.%. At boron concentrations above 0.3 at.%, the tensile stress was mainly caused by high defect density, and induced by a node‐blocked sliding effect at the grain boundar

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