Nature of compensating luminescence centers in Te-diffused and -doped GaSb | Zendy

Pradip Dutta | Zendy; Bianchi Méndez | Zendy; J. Piqueras | Zendy; E. Diéguez | Zendy; H. L. Bhat | Zendy

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Nature of compensating luminescence centers in Te-diffused and -doped GaSb

Author(s) -

Pradip Dutta,

Bianchi Méndez,

J. Piqueras,

E. Diéguez,

H. L. Bhat

Publication year - 1996

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.362848

Subject(s) - cathodoluminescence , acceptor , luminescence , photoluminescence , doping , diffusion , materials science , analytical chemistry (journal) , tellurium , radiative transfer , optoelectronics , chemistry , condensed matter physics , optics , thermodynamics , physics , metallurgy , chromatography

Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga-Sb or related complex. The reasons for the formation of various acceptor centers have been discussed

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