Open AccessErratum: ‘‘Properties of AlN films grown at 350 K by gas-phase excimer laser photolysis’’ [J. Appl. Phys. 78, 6000 (1995)]
Author(s) -
G. Radhakrishnan
Publication year - 1996
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.362718
Subject(s) - photodissociation , excimer laser , gas phase , phase (matter) , materials science , excimer , laser , chemistry , analytical chemistry (journal) , crystallography , optics , photochemistry , physics , organic chemistry
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