Open AccessPhonon deformation potentials of hexagonal GaN studied by biaxial stress modulation
Author(s) -
Jun-Yong Lu,
Dongmei Deng,
Yong Wang,
Kevin J. Chen,
Kei May Lau,
TongYi Zhang
Publication year - 2011
Publication title -
aip advances
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.421
H-Index - 58
ISSN - 2158-3226
DOI - 10.1063/1.3626532
Subject(s) - materials science , chemical vapor deposition , sapphire , raman spectroscopy , stress (linguistics) , epitaxy , phonon , microfabrication , modulation (music) , deformation (meteorology) , condensed matter physics , optoelectronics , composite material , optics , fabrication , physics , medicine , laser , linguistics , philosophy , alternative medicine , layer (electronics) , pathology , acoustics
In this work, a biaxial stress modulation method, combining the microfabrication technique, finite element analysis and a weighted averaging process, was developed to study piezospectroscopic behavior of hexagonal GaN films, epitaxially grown by metalorganic chemical vapor deposition on c-sapphire and Si (111) substrates. Adjusting the size of patterned islands, various biaxial stress states could be obtained at the island centers, leading to abundant stress-Raman shift data. With the proposed stress modulation method, the Raman biaxial stress coefficients of E2H and A1 (LO) phonons of GaN were determined to be 3.43 cm-1/GPa and 2.34 cm-1/GPa, respectively
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