EUV Dark-Field Microscopy for Defect Inspection | Zendy

Larissa Juschkin | Zendy; Aleksey Maryasov | Zendy; Stefan Herbert | Zendy; Anke Aretz | Zendy; K. Bergmann | Zendy; R. Lebert | Zendy; Ian McNulty | Zendy; Catherine Eyberger | Zendy; Barry Lai | Zendy

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EUV Dark-Field Microscopy for Defect Inspection

Author(s) -

Larissa Juschkin,

Aleksey Maryasov,

Stefan Herbert,

Anke Aretz,

K. Bergmann,

R. Lebert,

Ian McNulty,

Catherine Eyberger,

Barry Lai

Publication year - 2011

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.3625355

Subject(s) - extreme ultraviolet lithography , optics , materials science , dark field microscopy , microscope , magnification , microscopy , wavelength , extreme ultraviolet , optoelectronics , physics , laser

An actinic EUV microscope for defect detection on mask blanks for operation in dark field using a table-top discharge-produced plasma source has been developed. Several test structures (pits and bumps) on multilayer mirrors were investigated by our Schwarzschild objective-based EUV microscope at 13.5-nm wavelength and then characterized with an atomic force microscope. Possible defect-detection limits with large field of view and moderate magnification are discussed in terms of required irradiation dose and system performance

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