Open AccessLaser operation of Ga(NAsP) lattice-matched to (001) silicon substrate
Author(s) -
S. Liebich,
M. Zimprich,
Andreas Beyer,
C. Lange,
D. J. Franzbach,
Sangam Chatterjee,
N. Hossain,
Stephen J. Sweeney,
Kerstin Volz,
B. Kunert,
W. Stolz
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3624927
Subject(s) - lasing threshold , materials science , optoelectronics , laser , silicon , heterojunction , semiconductor laser theory , microelectronics , substrate (aquarium) , semiconductor , optics , wavelength , oceanography , physics , geology
The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa)P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This “proof of principle” points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics.
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