Open AccessOptical properties of high quality Cu2ZnSnSe4 thin films
Author(s) -
F. Luckert,
David I. Hamilton,
М. V. Yakushev,
Neil S. Beattie,
Guillaume Zoppi,
M. Moynihan,
Ian Forbes,
A. V. Karotki,
А. В. Мудрый,
M. Grossberg,
J. Krustok,
Robert Martin
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3624827
Subject(s) - photoluminescence , materials science , thin film , phonon , acceptor , sputter deposition , sputtering , band gap , molybdenum , optoelectronics , spectral line , absorption (acoustics) , analytical chemistry (journal) , molecular physics , condensed matter physics , chemistry , nanotechnology , physics , chromatography , astronomy , composite material , metallurgy
Cu2ZnSnSe4 thin films, fabricated on bare or molybdenum coated glass substrates by magnetron sputtering and selenisation, were studied by a range of techniques. Photoluminescence spectra reveal an excitonic peak and two phonon replicas of a donor-acceptor pair (DAP) recombination. Its acceptor and donor ionisation energies are 27 and 7 meV, respectively. This demonstrates that high-quality Cu2ZnSnSe4 thin films can be fabricated. An experimental value for the longitudinal optical phonon energy of 28 meV was estimated. The band gap energy of 1.01 eV at room temperature was determined using optical absorption spectra
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