Graphene on β-Si3N4: An ideal system for graphene-based electronics | Zendy

Ming Yang | Zendy; Chun Zhang | Zendy; Shijie Wang | Zendy; Yuanping Feng | Zendy; Ariando Ariando | Zendy

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Graphene on β-Si3N4: An ideal system for graphene-based electronics

Author(s) -

Ming Yang,

Chun Zhang,

Shijie Wang,

Yuanping Feng,

Ariando Ariando

Publication year - 2011

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3623567

Subject(s) - graphene , electronics , materials science , nanotechnology , dielectric , substrate (aquarium) , electron mobility , optoelectronics , layer (electronics) , bilayer graphene , electronic circuit , electrical engineering , engineering , oceanography , geology

One of the most severe limits in future design of graphene-based electronic devices is that when supported on a substrate, the electron mobility of graphene is often reduced by an order of magnitude or more. In this paper, via theoretical calculations, we show that the non-polar β-Si3N4 (0001) surface may be an excellent support for both single-layer or bi-layer graphene to overcome this limit. Since the high-κ dielectric material is an indispensable component in integrated circuits, the silicon nitride supported graphene as discussed in this paper may provide an ideal platform for future graphene-based electronics

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