Open AccessErratum: “Indium migration paths in V-defects of InAlN grown by metal-organic vapor phase epitaxy” [Appl. Phys. Lett. 95, 071905 (2009)]
Author(s) -
Th. Kehagias,
G. P. Dimitrakopulos,
J. Kioseoglou,
H. Kirmse,
C. Giesen,
M. Heuken,
A. Georgakilas,
Wolfgang Neumann,
Th. Karakostas,
Ph. Komninou
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3623430
Subject(s) - indium , epitaxy , materials science , metal , vapor phase , phase (matter) , condensed matter physics , optoelectronics , nanotechnology , chemistry , metallurgy , thermodynamics , physics , organic chemistry , layer (electronics)
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