Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator | Zendy

A. Haarahiltunen | Zendy; Aapo Varpula | Zendy; Hele Savin | Zendy

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Modeling the effect of mobile ion contamination on the stability of a microelectromechanical resonator

Author(s) -

A. Haarahiltunen,

Aapo Varpula,

Hele Savin

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3622511

Subject(s) - resonator , microelectromechanical systems , materials science , optoelectronics , dielectric , contamination , silicon , diffusion , ion , range (aeronautics) , stability (learning theory) , physics , computer science , thermodynamics , composite material , quantum mechanics , ecology , machine learning , biology

We present a theoretical model for mobile ion contamination in a silicon microelectromechanical resonator. In the model both drift and diffusion of the mobile charge in dielectric films are taken into account. The model is verified through a comparison to existing experimental data. We show that the model can describe the frequency drift of resonators in a wide temperature range.Peer reviewe

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