Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators | Zendy

Andrei Vorobiev | Zendy; John Arthur Berge | Zendy; Spartak Gevorgian | Zendy; Markus Löffler | Zendy; Eva Olsson | Zendy

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Effect of interface roughness on acoustic loss in tunable thin film bulk acoustic wave resonators

Author(s) -

Andrei Vorobiev,

John Arthur Berge,

Spartak Gevorgian,

Markus Löffler,

Eva Olsson

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3610513

Subject(s) - materials science , resonator , surface finish , scattering , surface roughness , acoustic wave , surface acoustic wave , acoustics , composite material , optics , optoelectronics , physics

Tunable 5.2 GHz bulk acoustic wave resonators utilizing Ba(x)Sr(1-x)TiO(3) ferroelectric films with similar intrinsic properties but different interface roughness are fabricated and characterized. Increase in roughness from 3.2 nm up to 6.9 nm results in reduction in Q-factor from 350 down to 150 due to extrinsic acoustic losses caused by wave scattering at reflections from rough interfaces and other mechanisms associated with roughness. The increased roughness is a result of distortion of Pt bottom electrode caused by formation of heterogeneous enclosures of TiO(2-x) in the Pt layer. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3610513

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