Laser writing of the electronic activity of N- and H-atoms in GaAs | Zendy

Nilanthy Balakrishnan | Zendy; A. Patanè | Zendy; O. Makarovsky | Zendy; A. Polimeni | Zendy; M. Capizzi | Zendy; F. Martelli | Zendy; S. Rubini | Zendy

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Laser writing of the electronic activity of N- and H-atoms in GaAs

Author(s) -

Nilanthy Balakrishnan,

A. Patanè,

O. Makarovsky,

A. Polimeni,

M. Capizzi,

F. Martelli,

S. Rubini

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3610464

Subject(s) - masking (illustration) , laser , band gap , nitride , electronic structure , materials science , optoelectronics , wide bandgap semiconductor , atomic physics , optics , nanotechnology , condensed matter physics , physics , art , layer (electronics) , visual arts

We use a focussed laser beam to control the electronic activity of N- and H-atoms in a dilute nitride Ga(AsN)/GaAs quantum well. Our approach yields submicron resolution in the spatial manipulation of the electronic properties and can provide an alternative method to masking techniques for H-defect engineering and in-plane patterning of the band gap energy. © 2011 American Institute of Physics

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