Open AccessErratum: “Hall resistivity of Fe doped Si film at low temperatures” [Appl. Phys. Lett. 98, 112109 (2011)]
Author(s) -
Yan Xu,
Weihang Su,
Tianxiao Nie,
Jiaolin Cui,
Y. M. Shao,
Zenan Jiang
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3608144
Subject(s) - condensed matter physics , electrical resistivity and conductivity , doping , hall effect , materials science , silicon , physics , optoelectronics , quantum mechanics
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