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Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers
Author(s) -
Barnabas A. Ikyo,
Igor P. Marko,
A.R. Adams,
Stephen J. Sweeney,
C. L. Canedy,
I. Vurgaftman,
C. S. Kim,
M. Kim,
W. W. Bewley,
J. R. Meyer
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3606533
Subject(s) - lasing threshold , cascade , laser , atmospheric temperature range , materials science , hydrostatic pressure , semiconductor laser theory , radiative transfer , spontaneous emission , infrared , optoelectronics , atomic physics , chemistry , semiconductor , optics , physics , thermodynamics , chromatography
The thermal properties of 5-stage “W” Interband-Cascade Lasers emitting at 4.1 μm at room temperature (RT) are investigated by measuring the lasing and spontaneous emission properties as a function of temperature and hydrostatic pressure up to 1 GPa. Experiments show that at RT more than 90% of threshold current of these devices is due to non-radiative loss processes. We also find that the threshold current density dependence on temperature can be fitted with a single exponential function over a wide temperature range with a characteristic temperature, T0, of 45 K. The relatively high temperature sensitivity in these devices is attributable to the large non-radiative current contribution coupled with non-pinning of the carrier density above threshold.

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