Open AccessHuge Anisotropic Magnetoresistance In Epitaxial Sm[sub 0.53]Sr[sub 0.47]MnO[sub 3] Thin Films
Author(s) -
M. K. Srivastava,
Amarjeet Kaur,
H. K. Singh,
Alka B. Garg,
R. Mittal,
R. Mukhopadhyay
Publication year - 2011
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.3606052
Subject(s) - magnetoresistance , materials science , epitaxy , colossal magnetoresistance , ferromagnetism , condensed matter physics , thin film , sputter deposition , magnetic anisotropy , anisotropy , sputtering , analytical chemistry (journal) , magnetic field , nanotechnology , magnetization , optics , chemistry , physics , layer (electronics) , quantum mechanics , chromatography
In the present work we have studied the variation of LFMR as a function of the angle (θ) between the applied magnetic field and the plane of the film. DC magnetron sputtering was used for film preparation on LSAT single crystal substrates from Sm0.55Sr0.45MnO3 targets synthesized by the solid state reaction route. X‐ray diffraction confirmed the epitaxial nature of these films. These films have simultaneous ferromagnetic and metal insulator transition at ∼91 K. These films exhibit enhanced low field colossal magnetoresistance ∼99% at 3.6 kOe at 80 K. Huge anisotropy is observed in the MR, which decreases from ∼80% to 6% as θ increases from 0 to 90°. The evolution of the resistance as a function of time and the magnetic field at a constant temperature (T ≈ 77 K) has also been studied
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