The EL2 trap in highly doped GaAs:Te | Zendy

A. Castaldini | Zendy; A. Cavallini | Zendy; Beatrice Fraboni | Zendy; J. Piqueras | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

The EL2 trap in highly doped GaAs:Te

Author(s) -

A. Castaldini,

A. Cavallini,

Beatrice Fraboni,

J. Piqueras

Publication year - 1995

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.360480

Subject(s) - doping , deep level transient spectroscopy , capacitance , trap (plumbing) , fermi level , analytical chemistry (journal) , materials science , penning trap , electron , activation energy , spectroscopy , atomic physics , condensed matter physics , chemistry , optoelectronics , physics , electrode , silicon , quantum mechanics , chromatography , meteorology

We have investigated highly doped GaAs:Te at different doping concentrations (>10(17) cm(-3)) to assess the presence of the EL2 trap. We have utilized both capacitance and current transient spectroscopy techniques. The crucial parameter for the detection of EL2 is the relative position of the electron quasi-Fermi level in the depletion region. The observed shift of the EL2 apparent activation energy with increasing doping concentration is also discussed

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research