Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer)

doi:10.1063/1.360477A study of biaxial strain as a function of temperature in a ZnSe epilayer grown on a GaAs substrate is presented. The strains are determined by measuring the heavy‐ and light‐hole related excitonic transitions via photomodulated spectroscopy. The strain is found to increase with increasing temperature. The data are compared with a calculation using a previously determined elastic constant and thermal expansion coefficients. The temperature dependence determined here allows a comparison of various other optical measurements performed at different temperatures.The work by H. R. C. was supported in part by the U. S. Department of Energy under Contract No. DE-FG02-89ER45402. M. C. acknowledges the support from the U.S. Army Research Office DAAL-03-92-G0381. A. K.. R. acknowledges support from the National Science Foundation (Materials Research Group No. DMR89-13706) and R. L. G. from AFOSR-89-0438; both A. K. R. and R. L. G. also acknowledge support from DARPA-URI Grant No. 218-25015. We thank Lok C. Lew Yan Voon and L. R. Ram-Mohan for many stimulating discussions