z-logo
open-access-imgOpen Access
The metallic interface between the two band insulators LaGaO3 and SrTiO3
Author(s) -
Safdar Nazir,
Nirpendra Singh,
Udo Schwingenschlögl
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3604020
Subject(s) - materials science , doping , interface (matter) , condensed matter physics , metal , electronic band structure , conductivity , density functional theory , plane (geometry) , electronic structure , plane wave , chemistry , composite material , optoelectronics , computational chemistry , metallurgy , physics , optics , mathematics , capillary number , capillary action , geometry
The formation of metallic interface states between the two band insulators LaGaO3 and SrTiO3 is studied by the full-potential linearized augmented plane-wave method based on density functional theory.Structural optimization of the atomic positions points to only small changes of the chemical bonding at the interface. The n-type (LaO/TiO2) and p-type (GaO2/SrO) interfaces turn out to be metallic. Reduction of the O content increases the conductivity of the n-type interface, while the p-type interface can be turned gradually from a hole doped into an electron doped state

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom