Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers | Zendy

М. Vasundhara | Zendy; JeanMarc Routoure | Zendy; Bruno Guillet | Zendy; Laurence Méchin | Zendy; J. Grandal | Zendy; Sara Martin-Horcajo | Zendy; Tommaso Brazzini | Zendy; F. Calle | Zendy; M. A. Sánchez-Garcı́a | Zendy; P. Marié | Zendy; P. Ruterana | Zendy

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Volume charge carrier number fluctuations probed by low frequency noise measurements in InN layers

Author(s) -

М. Vasundhara,

JeanMarc Routoure,

Bruno Guillet,

Laurence Méchin,

J. Grandal,

Sara Martin-Horcajo,

Tommaso Brazzini,

F. Calle,

M. A. Sánchez-Garcı́a,

P. Marié,

P. Ruterana

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3601855

Subject(s) - trap (plumbing) , thermal conduction , materials science , noise (video) , infrasound , conduction band , band gap , molecular beam epitaxy , charge carrier , low frequency , volume (thermodynamics) , atomic physics , optoelectronics , epitaxy , physics , nanotechnology , electron , nuclear physics , layer (electronics) , image (mathematics) , quantum mechanics , astronomy , artificial intelligence , meteorology , computer science , acoustics , composite material

International audienceBulk conduction in molecular beam epitaxial InN layers has been confirmed using low frequency noise measurements versus temperature. A generation-recombination process has been identified at low temperatures 100 K and attributed to a trap with a discrete energy level in the band gap. The energy position of this trap has been determined to be around 52 meV below the conduction band minimum

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