Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation | Zendy

Hiroshi Nakashima | Zendy; Yoshiaki Iwamura | Zendy; Keita Sakamoto | Zendy; Dong Wang | Zendy; Kana Hirayama | Zendy; Keisuke Yamamoto | Zendy; Haigui Yang | Zendy

Open Access

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2/GeO2 bilayer passivation

Author(s) -

Hiroshi Nakashima,

Yoshiaki Iwamura,

Keita Sakamoto,

Dong Wang,

Kana Hirayama,

Keisuke Yamamoto,

Haigui Yang

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3601480

Subject(s) - passivation , annealing (glass) , bilayer , materials science , tin , metal gate , capacitor , oxide , optoelectronics , metal , semiconductor , forming gas , dipole , gate oxide , voltage , nanotechnology , chemistry , electrical engineering , layer (electronics) , metallurgy , membrane , biochemistry , engineering , organic chemistry , transistor

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO2/GeO2 bilayer passivation. PMA at 450 °C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from −0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2/GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6×1011 to 2.5×1011 cm−2 eV−1, as results of the nitrogen termination of defects at the SiO2/GeO2 interface and/or in the GeO2 interlayer.

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