Generation-recombination noise in submicron semiconductor layers: Influence of the edges
Author(s) -
T.G.M. Kleinpenning,
Sylvie Jarrix,
G. Lecoy
Publication year - 1995
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.360030
Subject(s) - recombination , semiconductor , conduction band , noise (video) , noise spectrum , enhanced data rates for gsm evolution , materials science , optoelectronics , doping , thermal conduction , wide bandgap semiconductor , condensed matter physics , physics , chemistry , electron , noise reduction , telecommunications , biochemistry , composite material , quantum mechanics , artificial intelligence , computer science , acoustics , image (mathematics) , gene
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