Open AccessElectrical characterization of (Ni/Au)/Al0.25Ga0.75N/GaN/SiC Schottky barrier diode
Author(s) -
S. Saadaoui,
Mohamed Mongi Ben Salem,
M. Gassoumi,
Hassen Maaref,
Christophe Gaquière
Publication year - 2011
Publication title -
journal of applied physics
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3600229
Subject(s) - materials science , deep level transient spectroscopy , schottky barrier , schottky diode , diode , optoelectronics , atmospheric temperature range , hysteresis , equivalent series resistance , quantum tunnelling , activation energy , capacitance , wide bandgap semiconductor , condensed matter physics , voltage , silicon , chemistry , electrical engineering , electrode , meteorology , physics , engineering , organic chemistry
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