Open AccessHomoepitaxial diamond films codoped with phosphorus and nitrogen by chemical-vapor deposition
Author(s) -
Guozhong Cao,
F. A. J. M. Driessen,
G.J. Bauhuis,
L.J. Giling,
Paul F. A. Alkemade
Publication year - 1995
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.359998
Subject(s) - cathodoluminescence , nitrogen , chemical vapor deposition , diamond , luminescence , phosphorus , epitaxy , materials science , analytical chemistry (journal) , photoluminescence , phosphine , inorganic chemistry , secondary ion mass spectrometry , chemistry , mineralogy , ion , nanotechnology , optoelectronics , environmental chemistry , metallurgy , organic chemistry , layer (electronics) , catalysis
Homoepitaxial diamond films codoped with phosphorus and nitrogen have been grown on natural diamond substrates using phosphine and nitrogen as doping sources by hot‐filament chemical‐vapor deposition. The experiments show that the incorporation of nitrogen enhances both the phosphorus incorporation and the film growth rate. The former is attributed to the local lattice dilatation caused by nitrogen, while the latter can be explained by defects induced on the surface of diamond by nitrogen or by a change in gaseous composition. The highest concentrations of phosphorus and nitrogen in the epitaxial films are approximately 3×1019 and 6×1019 atoms/cm3, respectively, determined by secondary‐ion‐mass spectrometry; however, these epilayers are highly resistive. Furthermore, cathodoluminescence and photoluminescence studies show that despite the variety of luminescence features related to nitrogen, no indication of phosphorus induced luminescence is found in the infrared to visible range.
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