Open AccessErratum: “Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films” [J. Appl. Phys. 108, 104513 (2010)]
Author(s) -
Debashis Panda,
A. Dhar,
S. K. Ray
Publication year - 2011
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.3596515
Subject(s) - non blocking i/o , materials science , optoelectronics , pulsed laser deposition , non volatile memory , resistive random access memory , laser , condensed matter physics , thin film , nanotechnology , optics , chemistry , physics , electrode , biochemistry , catalysis
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