Open AccessDemonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate
Author(s) -
Farid Medjdoub,
Malek Zegaoui,
Nathalie Rolland,
P.A. Rolland
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3595943
Subject(s) - materials science , optoelectronics , transconductance , transistor , silicon , high electron mobility transistor , diode , heterojunction , leakage (economics) , substrate (aquarium) , silicon on insulator , reverse leakage current , electrical engineering , schottky diode , oceanography , voltage , geology , economics , macroeconomics , engineering
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