Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes | Zendy

Jung Min Lee | Zendy; Hae Yong Jeong | Zendy; Kyoung Jin Choi | Zendy; Won Il Park | Zendy

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Metal/graphene sheets as p-type transparent conducting electrodes in GaN light emitting diodes

Author(s) -

Jung Min Lee,

Hae Yong Jeong,

Kyoung Jin Choi,

Won Il Park

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3595941

Subject(s) - graphene , light emitting diode , materials science , optoelectronics , electroluminescence , brightness , diode , layer (electronics) , contact resistance , sheet resistance , electrode , wide bandgap semiconductor , optics , nanotechnology , chemistry , physics

We demonstrate the use of graphene based transparent sheets as a p-type current spreading layer in GaN light emitting diodes (LEDs). Very thin Ni/Au was inserted between graphene and p-type GaN to reduce contact resistance, which reduced contact resistance from similar to 5.5 to similar to 0.6 Omega/ cm(2), with no critical optical loss. As a result, LEDs with metal-graphene provided current spreading and injection into the p-type GaN layer, enabling three times enhanced electroluminescent intensity compared with those with graphene alone. We confirmed very strong blue light emission in a large area of the metal-graphene layer by analyzing image brightness.open281

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