Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier | Zendy

Takafumi Akiho | Zendy; Tetsuya Uemura | Zendy; Masanobu Harada | Zendy; Ken-ichi Matsuda | Zendy; Masafumi Yamamoto | Zendy

Open Access

Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier

Author(s) -

Takafumi Akiho,

Tetsuya Uemura,

Masanobu Harada,

Ken-ichi Matsuda,

Masafumi Yamamoto

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3595311

Subject(s) - magnetoresistance , quantum tunnelling , materials science , condensed matter physics , schottky barrier , tunnel magnetoresistance , schottky diode , barrier layer , gallium arsenide , fermi level , layer (electronics) , optoelectronics , nanotechnology , electron , magnetic field , physics , quantum mechanics , diode

The effects of MgO tunnel barriers on both junction resistance and tunneling anisotropic magnetoresistance (TAMR) characteristics of Co2MnSi(CMS)/MgO/n-GaAs junctions and Co50Fe50(CoFe)/MgO/n-GaAs junctions were investigated. The resistance-area (RA) product of the CMS/MgO/n-GaAs junctions showed an exponential dependence on MgO thickness (t_[MgO]), indicating that the MgO layer acts as a tunneling barrier. The RA product of CMS/MgO/n-GaAs with t_[MgO] < 1 nm was smaller than that of the sample without MgO. The observed spin-valvelike magnetoresistance of CMS/n-GaAs and CoFe/n-GaAs Schottky tunnel junctions attributed to the TAMR effect did not appear in the cases of CMS/MgO/n-GaAs and CoFe/MgO/n-GaAs tunnel junctions. The lowering of the RA product and the suppression of the TAMR effect caused by inserting a thin MgO layer between CMS and n-GaAs were both possibly due to suppression of the Fermi-level pinning of GaAs and lowering of the Schottky barrier height

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