Open AccessPublisher’s Note: “Modeling the charge decay mechanism in nitrogen-rich silicon nitride films” [Appl. Phys. Lett. 98, 122909 (2011)]
Author(s) -
Yongling Ren,
Klaus Weber,
Natalita Maulani Nursam
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3592676
Subject(s) - mechanism (biology) , charge (physics) , nitrogen , silicon nitride , nitride , silicon , chemical physics , materials science , condensed matter physics , nanotechnology , physics , optoelectronics , quantum mechanics , layer (electronics)
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