Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability | Zendy

L. M. C. Pereira | Zendy; U. Wahl | Zendy; S. Decoster | Zendy; J. G. Correia | Zendy; M. R. da Silva | Zendy; A. Vantomme | Zendy; João P. Araújo | Zendy

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Direct identification of interstitial Mn in heavily p-type doped GaAs and evidence of its high thermal stability

Author(s) -

L. M. C. Pereira,

U. Wahl,

S. Decoster,

J. G. Correia,

M. R. da Silva,

A. Vantomme,

João P. Araújo

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3592568

Subject(s) - interstitial defect , doping , ferromagnetism , thermal stability , materials science , lattice (music) , magnetic semiconductor , manganese , diffusion , activation energy , crystallography , condensed matter physics , semiconductor , chemistry , metallurgy , physics , optoelectronics , thermodynamics , organic chemistry , acoustics

We report on the lattice location of Mn in heavily p-type doped GaAs by means of β− emission channeling from the decay of M56n. The majority of the Mn atoms substitute for Ga and up to 31% occupy the tetrahedral interstitial site with As nearest neighbors. Contrary to the general belief, we find that interstitial Mn is immobile up to 400 °C, with an activation energy for diffusion of 1.7–2.3 eV. Such high thermal stability of interstitial Mn has significant implications on the strategies and prospects for achieving room temperature ferromagnetism in Ga1−xMnxAs.

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