Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices | Zendy

M. Ciorga | Zendy; Christian Wolf | Zendy; A. Einwanger | Zendy; M. Utz | Zendy; D. Schuh | Zendy; D. Weiß | Zendy

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Local spin valve effect in lateral (Ga,Mn)As/GaAs spin Esaki diode devices

Author(s) -

M. Ciorga,

Christian Wolf,

A. Einwanger,

M. Utz,

D. Schuh,

D. Weiß

Publication year - 2011

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3591397

Subject(s) - condensed matter physics , magnetoresistance , spin valve , quantum tunnelling , spin (aerodynamics) , diode , materials science , physics , optoelectronics , magnetic field , quantum mechanics , thermodynamics

We report here on a local spin valve effect observed unambiguously in lateral all-semiconductor all-electrical spin injection devices, employing p+ −(Ga,Mn)As/n+ −GaAs Esaki diode structures as spin aligning contacts. We discuss the observed local spin-valve signal as a result of the interplay between spin-transport-related contribution and the tunneling anisotropic magnetoresistance of the magnetic contacts. The magnitude of the spin-related magnetoresistance change is equal to 30 Ω which is twice the magnitude of the measured non-local signal

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