Investigation of C60F36 as low-volatility p-dopant in organic optoelectronic devices | Zendy

Rico Meerheim | Zendy; Selina Olthof | Zendy; Martin Hermenau | Zendy; Sebastian Scholz | Zendy; Annette Petrich | Zendy; Nir Tessler | Zendy; Olga Solomeshch | Zendy; Björn Lüssem | Zendy; Moritz Riede | Zendy; Karl Leo | Zendy

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Investigation of C60F36 as low-volatility p-dopant in organic optoelectronic devices

Author(s) -

Rico Meerheim,

Selina Olthof,

Martin Hermenau,

Sebastian Scholz,

Annette Petrich,

Nir Tessler,

Olga Solomeshch,

Björn Lüssem,

Moritz Riede,

Karl Leo

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3590142

Subject(s) - dopant , oled , benzidine , materials science , doping , organic semiconductor , organic solar cell , tetracyanoquinodimethane , organic electronics , optoelectronics , molecule , thermal stability , fullerene , analytical chemistry (journal) , chemistry , nanotechnology , transistor , organic chemistry , layer (electronics) , polymer , composite material , physics , voltage , quantum mechanics

We demonstrate highly efficient small molecule organic light emitting diodes and organic solar cells based on the p-i-n-type structure using the fluorinated fullerene molecule C₆₀F₃₆ as p-dopant in the hole transport layer. We present synthesis, chemical analysis, and energy level investigation of the dopant as well as the conductivity of organic layers consisting of a matrix of N,N,N′,N′-tetrakis 4-methoxyphenyl-benzidine(MeO-TPD) or N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine(BF-DPB) doped by the fullerene compound. State of the art organic p-i-n devices containing C₆₀F₃₆ show efficiencies comparable to devices with the commonly used p-dopant2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F₄-TCNQ). The advantages of the fullerene based dopant are the low volatility and high thermal stability, which is beneficial for device operation under elevated temperature. These properties make C₆₀F₃₆ highly attractive for the usage as p-dopant in a broad spectrum of organic p-i-n devices like organic light emitting diodes, solar cells, memories, or transistors. © 2011 American Institute of Physics.