z-logo
open-access-imgOpen Access
Response to “Comment on ‘Threshold voltage control of oxide nanowire transistors using nitrogen plasma treatment’” [Appl. Phys. Lett. 98, 176101 (2011)]
Author(s) -
JinWoo Park,
HongKoo Baik,
Taekyung Lim,
Sanghyun Ju
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3584002
Subject(s) - nanowire , threshold voltage , materials science , transistor , plasma , oxide , voltage , nitrogen , optoelectronics , nanotechnology , physics , quantum mechanics , metallurgy

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom