Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level | Zendy

A. Castaldini | Zendy; A. Cavallini | Zendy; Beatrice Fraboni | Zendy; Bianchi Méndez | Zendy; Javier Piqueras | Zendy

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Spatial distribution of recombination centers in GaAs:Te: Effects of the doping level

Author(s) -

A. Castaldini,

A. Cavallini,

Beatrice Fraboni,

Bianchi Méndez,

Javier Piqueras

Publication year - 1994

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.357783

Subject(s) - surface photovoltage , wafer , electron beam induced current , crystallographic defect , materials science , doping , impurity , diffusion , scanning electron microscope , carrier lifetime , semiconductor , condensed matter physics , optoelectronics , analytical chemistry (journal) , silicon , crystallography , chemistry , physics , organic chemistry , quantum mechanics , spectroscopy , composite material , thermodynamics , chromatography

The distribution in liquid-encapsulated-Czochralski (LEC) GaAs:Te wafers of point and complex defects has been investigated together with their influence on the minority-carrier diffusion length L. Three wafers with different Te-doping concentration (2.2 X 10(17), 4.5 X 10(17), and 1.5 X 10(18) cm-3) have been studied by means of the electron-beam-induced-current (EBIC) mode of scanning electron microscopy and of the surface photovoltage (SPV) method. The morphology and electrical activity of the defects observed across each wafer have been correlated to the formation and distribution of deep electronic levels, which are significantly affected by the tellurium concentration. The diffusion length has been found to be mainly controlled by deep levels associated with dislocations. EBIC localized measurements of L and of the net ionized free-carrier concentration provide evidence for the influence of Te concentration on impurity segregation at complex defects

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