Open AccessElectronic-grade GaN(0001)/Al2O3(0001) grown by reactive DC-magnetron sputter epitaxy using a liquid Ga target
Author(s) -
Muhammad Junaid,
ChingLien Hsiao,
Justinas Pališaitis,
Jens Jensen,
Per O. Å. Persson,
Lars Hultman,
Jens Birch
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3576912
Subject(s) - full width at half maximum , materials science , epitaxy , photoluminescence , sputtering , sputter deposition , optoelectronics , transmission electron microscopy , dislocation , wide bandgap semiconductor , metalorganic vapour phase epitaxy , thin film , analytical chemistry (journal) , layer (electronics) , chemistry , nanotechnology , composite material , chromatography
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom