Open AccessRole of implantation-induced defects in surface-oriented diffusion of fluorine in silicon
Author(s) -
Cs. Szeles,
B. Nielsen,
P. AsokaKumar,
Kelvin G. Lynn,
M. Anderle,
T. P.,
Gary W. Rubloff
Publication year - 1994
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.357470
Subject(s) - annealing (glass) , vacancy defect , secondary ion mass spectrometry , silicon , fluorine , ion implantation , lattice diffusion coefficient , crystallographic defect , materials science , impurity , analytical chemistry (journal) , crystallography , chemistry , chemical physics , ion , effective diffusion coefficient , metallurgy , medicine , chromatography , radiology , organic chemistry , magnetic resonance imaging
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