Study of point defects in CdTe and CdTe:V by cathodoluminescence | Zendy

Umapada Pal | Zendy; J. Piqueras | Zendy; Paloma Fernández | Zendy; M. D. Serrano | Zendy; E. Diéguez | Zendy

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Study of point defects in CdTe and CdTe:V by cathodoluminescence

Author(s) -

Umapada Pal,

J. Piqueras,

Paloma Fernández,

M. D. Serrano,

E. Diéguez

Publication year - 1994

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.357442

Subject(s) - cathodoluminescence , cadmium telluride photovoltaics , luminescence , crystallographic defect , annealing (glass) , materials science , scanning electron microscope , electron microscope , optoelectronics , analytical chemistry (journal) , chemistry , crystallography , optics , physics , metallurgy , composite material , chromatography

Cathodoluminescence in the scanning electron microscope has been used to investigate the relationship of point defects in CdTe and CdTe:V with luminescence bands at 1.40 and 1.13 eV. V has been found to inhibit the 1.40 eV luminescence. Annealing experiments indicate that Cd and Te vacancies are involved in the mentioned emission bands

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