Open AccessOptical detection of magnetoelectric effect in the composite consisting of InGaN/GaN multiple quantum wells and FeCo thin film
Author(s) -
C. M. Wei,
H. Y. Shih,
Y. F. Chen,
Tai-Yuan Lin
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3574364
Subject(s) - materials science , piezoelectricity , magnetostriction , electric field , ferromagnetism , magnetoelectric effect , optoelectronics , wide bandgap semiconductor , polarization (electrochemistry) , nitride , thin film , semiconductor , quantum well , condensed matter physics , magnetic field , ferroelectricity , layer (electronics) , composite material , multiferroics , nanotechnology , dielectric , optics , laser , chemistry , physics , quantum mechanics
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