Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by thermally stimulated current spectroscopy
Author(s) -
K. Kuriyama,
K. Tomizawa,
Mari Kashiwakura,
K. Yokoyama
Publication year - 1994
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.357413
Subject(s) - materials science , acceptor , annealing (glass) , photoluminescence , exciton , doping , vacancy defect , ionization , ionization energy , analytical chemistry (journal) , deep level transient spectroscopy , spectroscopy , optoelectronics , condensed matter physics , ion , chemistry , crystallography , silicon , metallurgy , physics , organic chemistry , chromatography , quantum mechanics
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