z-logo
open-access-imgOpen Access
Characterization of deep level defects in thermally annealed Fe-doped semi-insulating InP by thermally stimulated current spectroscopy
Author(s) -
K. Kuriyama,
K. Tomizawa,
Mari Kashiwakura,
K. Yokoyama
Publication year - 1994
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.357413
Subject(s) - materials science , acceptor , annealing (glass) , photoluminescence , exciton , doping , vacancy defect , ionization , ionization energy , analytical chemistry (journal) , deep level transient spectroscopy , spectroscopy , optoelectronics , condensed matter physics , ion , chemistry , crystallography , silicon , metallurgy , physics , organic chemistry , chromatography , quantum mechanics

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom