Open AccessSchottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching
Author(s) -
M. Zaremba-Tymieniecki,
Z. A. K. Durrani
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3565971
Subject(s) - schottky barrier , materials science , nanowire , optoelectronics , etching (microfabrication) , field effect transistor , transistor , metal–semiconductor junction , silicon , thermionic emission , isotropic etching , schottky effect , schottky diode , rectangular potential barrier , nanotechnology , voltage , electrical engineering , layer (electronics) , diode , physics , engineering , quantum mechanics , electron
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