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A new phase-change memory material, in bulk, has been prepared by melt-quenching technique, which has a better glass forming ability. This sample is set and resettable relatively easily for several cycles at 2mA SET and RESET input currents, and is likely to be a suitable material for phase-change memory applications. Raman scattering studies have been undertaken during the SET and RESET operations to elucidate the local structural transformations that occur during these operations

Structural origin of set-reset process in a new bulk Si15Te83Ge2 phase-change memory material

Structural origin of set-reset process in a new bulk Si₁₅Te₈₃Ge₂ phase-change memory material