Structural origin of set-reset process in a new bulk Si15Te83Ge2 phase-change memory material | Zendy

Srinivasa Rao Gunti | Zendy; S. Asokan | Zendy

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Structural origin of set-reset process in a new bulk Si₁₅Te₈₃Ge₂ phase-change memory material

Author(s) -

Srinivasa Rao Gunti,

S. Asokan

Publication year - 2011

Publication title -

aip advances

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.421

H-Index - 58

ISSN - 2158-3226

DOI - 10.1063/1.3560852

Subject(s) - reset (finance) , phase change memory , set (abstract data type) , materials science , process (computing) , quenching (fluorescence) , phase (matter) , phase change , raman scattering , germanium compounds , raman spectroscopy , optoelectronics , computer science , silicon , thermodynamics , physics , optics , quantum mechanics , financial economics , economics , fluorescence , programming language , operating system , germanium

A new phase-change memory material, in bulk, has been prepared by melt-quenching technique, which has a better glass forming ability. This sample is set and resettable relatively easily for several cycles at 2mA SET and RESET input currents, and is likely to be a suitable material for phase-change memory applications. Raman scattering studies have been undertaken during the SET and RESET operations to elucidate the local structural transformations that occur during these operations

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