Open AccessDonor complex formation due to a high-dose Ge implant into Si
Author(s) -
Ashawant Gupta,
M. Mahmudur Rahman,
Jianmin Qiao,
Cary Y. Yang,
Seongil Im,
N.W. Cheung,
Paul K. L. Yu
Publication year - 1994
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.355963
Subject(s) - materials science , epitaxy , transmission electron microscopy , stacking , dopant , photoluminescence , amorphous solid , germanium , boron , crystallography , heterojunction , optoelectronics , analytical chemistry (journal) , layer (electronics) , silicon , doping , nanotechnology , chemistry , organic chemistry , chromatography
To investigate boron deactivation and/or donor complex formation due to a high‐dose Ge and C implantation and the subsequent solid phase epitaxy, SiGe and SiGeC layers were fabricated and characterized. Cross‐sectional transmission electron microscopy indicated that the SiGe layer with a peak Ge concentration of 5 at. % was strained; whereas, for higher concentrations, stacking faults were observed from the surface to the projected range of the Ge as a result of strain relaxation. Photoluminescence (PL) results were found to be consistent with dopant deactivation due to Ge implantation and the subsequent solid phase epitaxial growth of the amorphous layer. Furthermore, for unstrained SiGe layers (Ge peak concentration ≥7 at. %), the PL results support our previously proposed donor complex formation. These findings were confirmed by spreading resistance profiling. A model for donor complex formation is proposed.
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