Electron and hole drift velocity in chemical vapor deposition diamond | Zendy

M. Gabrysch | Zendy; Saman Majdi | Zendy; Daniel J. Twitchen | Zendy; Jan Isberg | Zendy

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Electron and hole drift velocity in chemical vapor deposition diamond

Author(s) -

M. Gabrysch,

Saman Majdi,

Daniel J. Twitchen,

Jan Isberg

Publication year - 2011

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.3554721

Subject(s) - drift velocity , electric field , chemical vapor deposition , diamond , electron , saturation velocity , field (mathematics) , materials science , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , physics , nuclear physics , mathematics , quantum mechanics , chromatography , pure mathematics , composite material

The time-of-flight technique has been used to measure the drift velocities for electrons and holes in high-purity single-crystalline CVD diamond. Measurements were made in the temperature interval 83 ≤ T ≤ 460 K and for electric fields between 90 and 4 × 103 V/cm, applied in the <100> crystallographic direction. The study includes low-field drift mobilities and is performed in the low-injection regime to perturb the applied electric field only minimally

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