z-logo
open-access-imgOpen Access
Multiple phosphorus chemical sites in heavily phosphorus-doped diamond
Author(s) -
Hiroyuki Okazaki,
Rikiya Yoshida,
Takayuki Muro,
Tetsuya Nakamura,
Takanori Wakita,
Yuji Muraoka,
Masaaki Hirai,
Hiromitsu Kato,
Satoshi Yamasaki,
Yoshihiko Takano,
Satoshi Ishii,
Tamio Oguchi,
T. Yokoya
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3554699
Subject(s) - phosphorus , diamond , doping , materials science , chemical vapor deposition , chemistry , inorganic chemistry , nanotechnology , optoelectronics , metallurgy
We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom