Multiple phosphorus chemical sites in heavily phosphorus-doped diamond
Author(s) -
Hiroyuki Okazaki,
Rikiya Yoshida,
Takayuki Muro,
Tetsuya Nakamura,
Takanori Wakita,
Yuji Muraoka,
Masaaki Hirai,
Hiromitsu Kato,
Satoshi Yamasaki,
Yoshihiko Takano,
Satoshi Ishii,
Tamio Oguchi,
T. Yokoya
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3554699
Subject(s) - phosphorus , diamond , doping , materials science , chemical vapor deposition , chemistry , inorganic chemistry , nanotechnology , optoelectronics , metallurgy
We have performed high-resolution core level photoemission spectroscopy on a heavily phosphorus (P)-doped diamond film in order to elucidate the chemical sites of doped-phosphorus atoms in diamond. P 2p core level study shows two bulk components, providing spectroscopic evidence for multiple chemical sites of doped-phosphorus atoms. This indicates that only a part of doped-phosphorus atoms contribute to the formation of carriers. From a comparison with band calculations, possible origins for the chemical sites are discussed
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