The enhanced binding energy for biexcitons in InAs quantum dots | Zendy

Yasuaki Masumoto | Zendy; Seitaro Yoshida | Zendy; Michio Ikezawa | Zendy; Shinichi Tomimoto | Zendy; Yoshiki Sakuma | Zendy

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The enhanced binding energy for biexcitons in InAs quantum dots

Author(s) -

Yasuaki Masumoto,

Seitaro Yoshida,

Michio Ikezawa,

Shinichi Tomimoto,

Yoshiki Sakuma

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3554425

Subject(s) - biexciton , quantum dot , binding energy , exciton , physics , monolayer , condensed matter physics , atomic physics , materials science , optoelectronics , nanotechnology

We observed that the biexciton binding energy in InAs quantum rhombic disks (QRDs) is enhanced by twice compared with that for InAs quantum dots (QDs) so far reported around 1.24 μm nearby the telecommunication wavelength. The heterodyne-detected four-wave-mixing detected the exciton-biexciton quantum beat superposed on photon echo decay, giving the biexciton binding energy of 3.4 meV to 3 monolayer (ML) InAs QRDs and 4.1 meV to 4 ML InAs QRDs, respectively. The largest biexciton binding energy of 4.1 meV in InAs QDs is ascribed to increased electron-hole overlap in confined geometry with a minimized strain distribution

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