Open AccessElectron band alignment at the interface of (100)GaSb with molecular-beam deposited Al2O3
Author(s) -
V. V. Afanas’ev,
H.-Y. Chou,
A. Stesmans,
Clément Merckling,
Xiao Sun
Publication year - 2011
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.3549878
Subject(s) - semimetal , quasi fermi level , materials science , semiconductor , photoconductivity , conduction band , molecular beam epitaxy , optoelectronics , valence (chemistry) , valence band , electronic band structure , wide bandgap semiconductor , fabrication , electron , condensed matter physics , band gap , chemistry , nanotechnology , physics , epitaxy , medicine , organic chemistry , alternative medicine , layer (electronics) , quantum mechanics , pathology
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