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Communication: Highest occupied molecular orbital–lowest unoccupied molecular orbital gaps of doped silicon clusters from core level spectroscopy
Author(s) -
J. Tobias Lau,
M. Vogel,
A. Langenberg,
Konstantin Hirsch,
J. Rittmann,
Vicente ZamudioBayer,
T. Möller,
Bernd von Issendorff
Publication year - 2011
Publication title -
the journal of chemical physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.071
H-Index - 357
eISSN - 1089-7690
pISSN - 0021-9606
DOI - 10.1063/1.3547699
Subject(s) - photoionization , spectroscopy , molecular orbital , doping , silicon , homo/lumo , x ray photoelectron spectroscopy , band gap , vanadium , molecular physics , valence (chemistry) , photoemission spectroscopy , atomic physics , chemistry , direct and indirect band gaps , materials science , molecule , optoelectronics , physics , ionization , nuclear magnetic resonance , ion , inorganic chemistry , organic chemistry , quantum mechanics

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