Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence | Zendy

Ana Cremades | Zendy; F. Domı́nguez-Adame | Zendy; J. Piqueras | Zendy

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Study of defects in chemical vapor deposited diamond films by cross-sectional cathodoluminescence

Author(s) -

Ana Cremades,

F. Domı́nguez-Adame,

J. Piqueras

Publication year - 1993

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.354189

Subject(s) - cathodoluminescence , diamond , materials science , chemical vapor deposition , scanning electron microscope , dislocation , grain boundary , transmission electron microscopy , mineralogy , composite material , chemistry , optoelectronics , nanotechnology , microstructure , luminescence

Cathodoluminescence (CL) in the scanning electron microscope has been used to study the upper surface and cross-sectional samples of chemical vapor deposited diamond films. The CL emission is mainly localized at the grain boundaries of the columnar grains. The concentration of dislocation related radiative centers is higher in boundaries parallel to the growth axis than in boundaries parallel to the sample surface. The opposite occurs with the concentration of centers related to the presence of nitrogen

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