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Low temperature epitaxy of Ge quantum dots on Si(100)-(2×1) by femtosecond pulsed laser deposition under femtosecond laser excitation was investigated. Reflection high-energy electron diffraction and atomic force microscopy were used to analyze the growth mode and morphology. Epitaxial growth was achieved at ∼70 °C by using femtosecond laser excitation of the substrate. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed.

Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation