Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation | Zendy

Ali Er | Zendy; Wei Ren | Zendy; Hani E. Elsayed-Ali | Zendy

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Low temperature epitaxial growth of Ge quantum dot on Si(100)-(2×1) by femtosecond laser excitation

Author(s) -

Ali Er,

Wei Ren,

Hani E. Elsayed-Ali

Publication year - 2011

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.3537813

Subject(s) - femtosecond , epitaxy , quantum dot , excitation , materials science , laser , electron diffraction , optoelectronics , reflection high energy electron diffraction , substrate (aquarium) , surface diffusion , electron excitation , pulsed laser deposition , diffraction , thin film , optics , chemistry , nanotechnology , physics , oceanography , organic chemistry , layer (electronics) , quantum mechanics , adsorption , geology

Low temperature epitaxy of Ge quantum dots on Si(100)-(2×1) by femtosecond pulsed laser deposition under femtosecond laser excitation was investigated. Reflection high-energy electron diffraction and atomic force microscopy were used to analyze the growth mode and morphology. Epitaxial growth was achieved at ∼70 °C by using femtosecond laser excitation of the substrate. A purely electronic mechanism of enhanced surface diffusion of the Ge adatoms is proposed.

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